Spot type
Assure wafer quality |
Measurement results reflecting defect density and dopant concentration.
Accurately measures surface and internal quality of wafers.
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Improving wafer development efficiency |
Quality evaluation immediately after wafer slicing or wafer polishing provides quality information feedback in a short cycle.
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Improving of defect rate |
Improve defect rate by early detection and elimination of defective wafers.
Ideal for selecting wafer suppliers. |
Device Specification |
●Size |
W900 × D900 × H700 mm |
●Weight |
Approx.50 ㎏ |
●Power |
Single-phase AC 90 – 240 V |
●Operating environment |
Temperature and Humidity 25±5℃・≦85%RH |
Measurement Performance |
●Measuring time |
10sec or less / point |
●Measuring method |
Probe contact type |
●Sample size |
Up to 12inch |
●Sample resistivity |
Up to 20.0 Ω・cm |
●Measuring object |
p/n type Monocrystal |
Measurement result (image)
In-line Type for Full Inspection
- Corresponding to full inspection by connecting to the mass production line.
- By customizing the number of wafers to be measured at the same time, inspection time can be shortened.
*build-to-order
Device Specification |
●Size |
W2000 × D1500 × H1500 mm |
●Weight |
Approx. 500 ㎏ |
●Power |
Single-phase AC 100 – 230 V |
●Operating environment |
Temperature and Humidity 25±5℃・≦85%RH |
Measurement Performance |
●Measuring time |
1sec / wafer |
●Measuring method |
Probe contact type |
●Sample size |
Up to 12inch |
●Sample resistivity |
Up to 20.0 Ω・cm |
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