Effective Carrier Measurement Device
for Silicon Wafer of Solar Cell
ー New quality measurement method improves yield ー
Quality measurement with new technology “HS-CMR method”
Our devices measure the crystal quality of silicon wafers using the new technology “HS-CMR method” (High Speed – Current Modulating Resistivity method) developed at the Institute for Materials Research, Tohoku University. The devices comprehensively measure all the elements (electrons, holes, defects, impurities, etc.) related to the conversion efficiency of solar cells in a silicon wafer, and thereby it can accurately measure the number of electrons (number of effective carriers) contributing to power generation with one parameter.
Measuring and sorting conversion efficiency at wafer stage
The measurement results correlate with the conversion efficiency when silicon wafers are converted into solar cells. Our devices measure the performance of a silicon wafer that cannot be confirmed visually as “Potential conversion efficiency”. Since there is no need to convert a wafer with low potential conversion efficiency into cell, manufacturing costs can be greatly reduced.
New standard for improving the conversion efficiency
By clarifying the number of effective carriers in the wafer that could not have been measured accurately, it can be helpful to improve pn junction technology, one of the most important technologies for solar cells. In addition, by adjusting the amount of dopant diffusion for the number of effective carriers on each wafer, the overall performance of the solar cell produced can be increased.
Spot type
| Device Specification | |
|---|---|
| Size: | W600 × D550 × H250 mm |
| Weight: | Approx. 50 ㎏ |
| Power: | Single-phase AC 100 – 240 V |
| Operating environment: | Temperature and Humidity 25±5℃・≦85％RH |
| Measurement Performance | |
| Measuring time: | About 30 sec / wafer |
| Measuring method: | Probe contact type |
| Measuring range: | □156 × t0.2 ± 0.05 ㎜（Can be changed by option） |
| Measuring object: | p/n type Monocrystal・Polycrystal |
Stand-alone Type
・Up to 25 slices of wafer of 156 mm square can be stored in the cassette. ・Well suited also for laboratory with its compact body.
| Device Specification | |
|---|---|
| Size: | W900 × D900 × H560 mm |
| Weight: | Approx. 150 ㎏ |
| Power: | Single-phase AC 100 – 230 V |
| Operating environment: | Temperature and Humidity 25±5℃・≦85％RH |
| Measurement Performance | |
| Maximum capacity: | 25 wafers（Cassette type/Continuously measuring capable） |
| Measuring time: | 10 sec / wafer |
| Measuring method: | Probe contact type |
| Measuring object: | □156 × t0.05 – 0.5 ㎜ |
| Measuring range: | 0.1 – 10.0 Ω・cm |
In-line Type for Full Inspection (TBD)
・Corresponding to full inspection by connecting to the mass production line. ・By customizing the number of wafers to be measured at the same time, inspection time can be shortened.
| Device Specification | |
|---|---|
| Size: | W2000 × D1500 × H1500 mm |
| Weight: | Approx. 500 ㎏ |
| Power: | Single-phase AC 100 – 230 V |
| Operating environment: | Temperature and Humidity 25±5℃・≦85％RH |
| Measurement Performance | |
| Measuring time: | 1 sec / wafer |
| Measuring method: | Probe contact type |
| Measuring object: | □156 × t0.05 – 0.5 ㎜ |
| Measuring range: | 0.1 – 10.0 Ω・cm |
