Product

Effective Carrier Measurement Device

for Silicon Wafer of Solar Cell

ー New quality measurement method improves yield 

Quality measurement with new technology HS-CMR method

Our devices measure the crystal quality of silicon wafers using the new technology “HS-CMR method” (High Speed – Current Modulating Resistivity method) developed at the Institute for Materials Research, Tohoku University. The devices comprehensively measure all the elements (electrons, holes, defects, impurities, etc.) related to the conversion efficiency of solar cells in a silicon wafer, and thereby it can accurately measure the number of electrons (number of effective carriers) contributing to power generation with one parameter.

Measuring and sorting conversion efficiency at wafer stage

The measurement results correlate with the conversion efficiency when silicon wafers are converted into solar cells. Our devices measure the performance of a silicon wafer that cannot be confirmed visually as “Potential conversion efficiency”. Since there is no need to convert a wafer with low potential conversion efficiency into cell, manufacturing costs can be greatly reduced.

New standard for improving the conversion efficiency

By clarifying the number of effective carriers in the wafer that could not have been measured accurately, it can be helpful to improve pn junction technology, one of the most important technologies for solar cells. In addition, by adjusting the amount of dopant diffusion for the number of effective carriers on each wafer, the overall performance of the solar cell produced can be increased.

Spot type

Device Specification
Size: W600 ×  D550 ×  H250 mm
Weight: Approx. 50 ㎏
Power: Single-phase AC 100 – 240 V
Operating environment: Temperature and Humidity 25±5℃・≦85%RH
Measurement Performance
Measuring time: About 30 sec / wafer
Measuring method: Probe contact type
Measuring range: □156 × t0.2 ± 0.05 ㎜(Can be changed by option)
Measuring object: p/n type Monocrystal・Polycrystal

Stand-alone Type

 

・Up to 25 slices of wafer of 156 mm square can be stored in the cassette.      ・Well suited also for laboratory with its compact body.


Device Specification
Size: W900 × D900 × H560 mm
Weight: Approx. 150 ㎏
Power: Single-phase AC 100 – 230 V
Operating environment: Temperature and Humidity 25±5℃・≦85%RH
Measurement Performance
Maximum capacity: 25 wafers(Cassette type/Continuously measuring capable)
Measuring time: 10 sec / wafer
Measuring method: Probe contact type
Measuring object: □156 × t0.05 – 0.5 ㎜
Measuring range: 0.1 – 10.0 Ω・cm

In-line Type for Full Inspection (TBD)

・Corresponding to full inspection by connecting to the mass production line.                                                             ・By customizing the number of wafers to be measured at the same time, inspection time can be shortened.

Device Specification
Size: W2000 ×  D1500 ×  H1500 mm
Weight: Approx. 500 ㎏
Power: Single-phase AC 100 – 230 V
Operating environment: Temperature and Humidity 25±5℃・≦85%RH
Measurement Performance
Measuring time: 1 sec / wafer
Measuring method: Probe contact type
Measuring object: □156 × t0.05 – 0.5 ㎜
Measuring range: 0.1 – 10.0 Ω・cm